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Structural phase transition and bandgap control through mechanical deformation in layered semiconductors 1T–ZrX2 (X = S, Se)
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Martino, Edoardo
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Santos-Cottin, David
Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
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Le Mardelé, Florian
Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
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Semeniuk, Konstantin
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Pizzochero, Michele
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Čerņevičs, Kristia̅ns
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Baptiste, Benoît
Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne University, CNRS UMR 7590, IMPMC, F-75005, Paris, France
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Delbes, Ludovic
Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne University, CNRS UMR 7590, IMPMC, F-75005, Paris, France
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Klotz, Stefan
Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne University, CNRS UMR 7590, IMPMC, F-75005, Paris, France
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Capitani, Francesco
Synchrotron-SOLEIL, Saint-Aubin, BP48, F-91192 Gif-sur-Yvette Cedex, France
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Berger, Helmuth
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Yazyev, Oleg V.
Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Akrap, Ana
Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
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Published in:
- ACS Materials Letters. - 2020, vol. 2, no. 9, p. 1115–1120
English
Applying elastic deformation can tune a material’s physical properties locally and reversibly. Spatially modulated lattice deformation can create a bandgap gradient, favoring photogenerated charge separation and collection in optoelectronic devices. These advantages are hindered by the maximum elastic strain that a material can withstand before breaking. Nanomaterials derived by exfoliating transition metal dichalcogenides (TMDs) are an ideal playground for elastic deformation, as they can sustain large elastic strains, up to a few percent. However, exfoliable TMDs with highly strain-tunable properties have proven challenging for researchers to identify. We investigated 1T-ZrS2 and 1T-ZrSe2, exfoliable semiconductors with large bandgaps. Under compressive deformation, both TMDs dramatically change their physical properties. 1T-ZrSe2 undergoes a reversible transformation into an exotic three- dimensional lattice, with a semiconductor-to-metal transition. In ZrS2, the irreversible transformation between two different layered structures is accompanied by a sudden 14% bandgap reduction. These results establish that Zr-based TMDs are an optimal strain-tunable platform for spatially textured bandgaps, with a strong potential for novel optoelectronic devices and light harvesting.
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Faculty
- Faculté des sciences et de médecine
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Department
- Département de Physique
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Language
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Classification
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Physics
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License
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License undefined
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Identifiers
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Persistent URL
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https://folia.unifr.ch/unifr/documents/309107
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