High-harmonic generation in Mott insulators
- Murakami, Yuta Department of Physics, University of Fribourg, Switzerland
- Eckstein, Martin Department of Physics, University of Erlangen-Nürnberg, Erlangen, Germany
- Werner, Philipp Department of Physics, University of Fribourg, Switzerland
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02.08.2018
Published in:
- Physical Review Letters. - 2018, vol. 121, no. 5, p. 057405
English
Using Floquet dynamical mean-field theory, we study the high-harmonic generation in the time-periodic steady states of wide-gap Mott insulators under ac driving. In the strong-field regime, the harmonic intensity exhibits multiple plateaus, whose cutoff energies εcut=U+mE0 scale with the Coulomb interaction U and the maximum field strength E0. In this regime, the created doublons and holons are localized because of the strong field and the mth plateau originates from the recombination of mth nearest- neighbor doublon-holon pairs. In the weak-field regime, there is only a single plateau in the intensity, which originates from the recombination of itinerant doublons and holons. Here, εcut=Δgap+αE0, with Δgap the band gap and α>1. We demonstrate that the Mott insulator shows a stronger high-harmonic intensity than a semiconductor model with the same dispersion as the Mott insulator, even if the semiconductor bands are broadened by impurity scattering to mimic the incoherent scattering in the Mott insulator.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 323478
- DOI 10.1103/PhysRevLett.121.057405
- Persistent URL
- https://folia.unifr.ch/unifr/documents/307498
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