Non-collinear and asymmetric polar moments at back-gated SrTiO3 interfaces
DOKPE
- Lyzwa, Fryderyk ORCID University of Fribourg
- Pashkevich, Yurii G. ORCID O. O. Galkin Donetsk Institute for Physics and Engineering NAS of Ukraine, Kyiv, Ukraine
- Marsik, Premysl ORCID University of Fribourg
- Sirenko, Andrei New Jersey Institute of Technology, Newark, USA
- Chan, Andrew The University of Auckland, New Zealand
- Mallett, Benjamin P. P. The University of Auckland, New Zealand
- Yazdi-Rizi, Meghdad University of Fribourg
- Xu, Bing University of Fribourg
- Vicente-Arche, Luis M. Université Paris-Saclay, Palaiseau, France
- Vaz, Diogo C. ORCID Université Paris-Saclay, Palaiseau, France
- Herranz, Gervasi ORCID Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Bellaterra, Catalonia, Spain
- Cazayous, Maximilien Université Paris Cité, France
- Hemme, Pierre Université Paris Cité, France
- Fürsich, Katrin ORCID Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
- Minola, Matteo ORCID Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
- Keimer, Bernhard ORCID Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
- Bibes, Manuel ORCID Université Paris-Saclay, Palaiseau, France
- Bernhard, Christian ORCID University of Fribourg
- 2022
Published in:
- Communications Physics. - London, UK : Springer Nature. - 2022, vol. 5, no. 133, p. 1-8
English
The mechanism of the gate-field-induced metal-to-insulator transition of the electrons at the interface of SrTiO3 with LaAlO3 or AlOx is of great current interest. Here, we show with infrared ellipsometry and confocal Raman spectroscopy that an important role is played by a polar lattice distortion that is non-collinear, highly asymmetric and hysteretic with respect to the gate field. The anomalous behavior and the large lateral component of the underlying local electric field is explained in terms of the interplay between the oxygen vacancies, that tend to migrate and form extended clusters at the antiferrodistortive domain boundaries, and the interfacial electrons, which get trapped/detrapped at the oxygen vacancy clusters under a positive/negative gate bias. Our findings open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various parameters, like strain, temperature, or photons.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
-
- English
- Classification
- Physics
- License
- CC BY
- Open access status
- gold
- Identifiers
-
- DOI 10.1038/s42005-022-00905-3
- ISSN 2399-3650
- Persistent URL
- https://folia.unifr.ch/unifr/documents/329640
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