Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (∊044) and tilt of suspended monolithic silicon nanowire structures
Dolabella, SimoneEMPA, Swiss Federal Laboratories for Materials Science and Technology, Center for X-ray Analytics, Dübendorf, Switzerland - Department of Chemistry, University of Fribourg, Switzerland
Frison, RuggeroEMPA, Swiss Federal Laboratories for Materials Science and Technology, Center for X-ray Analytics, Dübendorf, Switzerland
Chahine, Gilbert A.ID01, European Synchrotron Radiation Facility (ESRF), Grenoble, France - Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP 38000, France
Richter, CarstenID01, European Synchrotron Radiation Facility (ESRF), Grenoble, France
Schulli, Tobias U.ID01, European Synchrotron Radiation Facility (ESRF), Grenoble, France
Tasdemir, ZuhalDepartment of Mechanical Engineering, Koc University, Sariyer, Istanbul, Turkey
Alaca, B. ErdemDepartment of Mechanical Engineering, Koc University, Sariyer, Istanbul, Turkey - Surface Science and Technology Center (KUYTAM), Koc University, Sariyer, Istanbul Turkey
Leblebic, YusufARTORG Center for Biomedical Engineering Research, University of Bern, Switzerland - École Polytechnique Fédérale de Lausanne, (EPFL), Lausanne, Switzerland - Sabanci University, Istanbul, Turkey
Dommann, AlexEMPA, Swiss Federal Laboratories for Materials Science and Technology, Center for X-ray Analytics, Dübendorf, Switzerland - ARTORG Center for Biomedical Engineering Research, University of Bern, Switzerland
Neels, AntoniaEMPA, Swiss Federal Laboratories for Materials Science and Technology, Center for X-ray Analytics, Dübendorf, Switzerland - Department of Chemistry, University of Fribourg, Switzerland
Journal of Applied Crystallography. - 2020, vol. 53, no. 1, p. 58–68
English
Silicon nanowire-based sensors find many applications in micro- and nano- electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and nano-fabricated silicon-based structures adopting the scanning X-ray diffraction microscopy technique for mapping the in-plane crystalline strain ([epsilon]044) and tilt of a device which includes pillars with suspended nanowires on a substrate. It is shown how the micro- and nanostructures of this new type of nanowire system are influenced by critical steps of the fabrication process, such as electron-beam lithography and deep reactive ion etching. X-ray analysis performed on the 044 reflection shows a very low level of lattice strain (< 0.00025 Δd/d) but a significant degree of lattice tilt (up to 0.214°). This work imparts new insights into the crystal structure of micro- and nanomaterial-based sensors, and their relationship with critical steps of the fabrication process.