Journal article

Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- T c cuprate superconductors YBa 2 Cu 3 O 7 − x and the colossal magnetoresistive manganite ferromagnets La 2 / 3 X 1 / 3 MnO 3 + δ ( X = Ca , Sr )

  • Andrés Prada, R. de Department of Physics, Stockholm University, AlbaNova University Center, Stockholm, Sweden - Physics Department and Fribourg Center for Nanomaterials, University of Fribourg, Switzerland
  • Golod, T. Department of Physics, Stockholm University, AlbaNova University Center, Stockholm, Sweden
  • Kapran, O. M. Department of Physics, Stockholm University, AlbaNova University Center, Stockholm, Sweden
  • Borodianskyi, E. A. Department of Physics, Stockholm University, AlbaNova University Center, Stockholm, Sweden
  • Bernhard, Christian Physics Department and Fribourg Center for Nanomaterials, University of Fribourg, Switzerland
  • Krasnov, V. M. Department of Physics, Stockholm University, AlbaNova University Center, Stockholm, Sweden - Moscow Institute of Physics and Technology, State University, Dolgoprudny, Russia
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    21.06.2019
Published in:
  • Physical Review B. - 2019, vol. 99, no. 21, p. 214510
English Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nanoscale superconductor/ferromagnet/superconductor junctions with the high-Tc cuprate superconductors YBa2Cu3O7−x and the colossal magnetoresistive (CMR) manganite ferromagnets La2/3X1/3MnO3+δ (X=Ca or Sr). We demonstrate that in a broad temperature range the magnetization of a manganite nanoparticle, forming the junction interface, switches abruptly in a monodomain manner. The CMR phenomenon translates the magnetization loop into a hysteretic magnetoresistance loop. The latter facilitates a memory functionality of such a junction with just a single CMR ferromagnetic layer. The orientation of the magnetization (stored information) can be read out by simply measuring the junction resistance in a finite magnetic field. The CMR facilitates a large readout signal in a small applied field. We argue that such a simple single-layer CMR junction can operate as a memory cell both in the superconducting state at cryogenic temperatures and in the normal state up to room temperature.
Faculty
Faculté des sciences et de médecine
Department
Département de Physique
Language
  • English
Classification
Physics
License
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Persistent URL
https://folia.unifr.ch/unifr/documents/308049
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