Ultrafast electronic band gap control in an excitonic insulator
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Mor, Selene
Fritz-Haber-Institut der MPG, Berlin, Germany
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Herzog, Marc
Fritz-Haber-Institut der MPG, Berlin, Germany - Institute for Physics and Astronomy, University of Potsdam, Germany
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Golež, Denis
Department of Physics, University of Fribourg, Switzerland
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Werner, Philipp
Department of Physics, University of Fribourg, Switzerland
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Eckstein, Martin
Department of Physics, University of Erlangen-Nürnberg, Erlangen, Germany
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Katayama, Naoyuki
Department of Physical Science and Engineering, Nagoya University, Japan
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Nohara, Minoru
Research Institute for Interdisciplinary Science, Okayama University, Japan
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Takagi, Hide
Max Planck Institute for Solid State Research, Stuttgart, Germany - Department of Physics, University of Tokyo, Japan
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Mizokawa, Takashi
Department of Applied Physics, Waseda University, Tokyo, Japan
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Monney, Claude
Institute of Physics, University of Zurich, Switzerland
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Stähler, Julia
Fritz-Haber-Institut der MPG, Berlin, Germany
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Published in:
- Physical Review Letters. - 2017, vol. 119, no. 8, p. 086401
English
We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of FC=0.2 mJ cm−2, the band gap narrows transiently, while it is enhanced above FC. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low- temperature excitonic insulator phase of Ta2NiSe5, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta2NiSe5 with light on the femtosecond time scale.
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Faculty
- Faculté des sciences et de médecine
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Department
- Département de Physique
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Language
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Classification
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Physics
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License
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License undefined
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Identifiers
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Persistent URL
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https://folia.unifr.ch/unifr/documents/306110
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