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Hybrid heterojunctions of solution-processed semiconducting 2d transition metal dichalcogenides

  • Yu, Xiaoyun Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
  • Rahmanudin, Aiman Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
  • Jeanbourquin, Xavier A. Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
  • Tsokkou, Demetra Department of Chemistry, University of Fribourg, Switzerland
  • Guijarro, Néstor Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
  • Banerji, Natalie Department of Chemistry, University of Fribourg, Switzerland
  • Sivula, Kevin Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
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    10.02.2017
Published in:
  • ACS Energy Letters. - 2017, vol. 2, no. 2, p. 524–531
English Exfoliated transition metal dichalcogenides (2D-TMDs) are attractive light-harvesting materials for large-area and inexpensive solar energy conversion given their ability to form highly tolerant heterojunctions. However, the preparation of large-area heterojunctions with these materials remains a challenge toward practical devices, and the details of photogenerated charge carrier harvesting are not well established. In this work, we use all solution-based methods to prepare large-area hybrid heterojunction films consisting of exfoliated semiconducting 2H-MoS2 flakes and a perylene-diimide (PDI) derivative. Hybrid photoelectrodes exhibited a 6-fold improvement in photocurrent compared to that of bare MoS2 or PDI films. Kelvin probe force microscopy, X-ray photoelectron spectroscopy, and transient absorption measurements of the hybrid films indicate the formation of an interfacial dipole at the MoS2/organic interface and suggest that the photogenerated holes transfer from MoS2 to the PDI. Moreover, performing the same analysis on MoSe2-based hybrid devices confirms the importance of proper valence band alignment for efficient charge transfer and photogenerated carrier collection in TMD/organic semiconductor hybrid heterojunctions.
Faculty
Faculté des sciences et de médecine
Department
Département de Chimie
Language
  • English
Classification
Chemistry
License
License undefined
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Persistent URL
https://folia.unifr.ch/unifr/documents/305448
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