Chemical nucleation of diamond films
- Mandal, Soumen School of Physics and Astronomy, Cardiff University, United Kingdom
- Thomas, Evan L. H. School of Physics and Astronomy, Cardiff University, United Kingdom
- Jenny, Titus A. Department of Chemistry, University of Fribourg, Switzerland
- Williams, Oliver A. School of Physics and Astronomy, Cardiff University, United Kingdom
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05.10.2016
Published in:
- ACS Applied Materials & Interfaces. - 2016, vol. 8, no. 39, p. 26220–26225
English
With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp² content.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Chimie
- Language
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- English
- Classification
- Chemistry
- License
- License undefined
- Identifiers
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- RERO DOC 278496
- DOI 10.1021/acsami.6b08286
- Persistent URL
- https://folia.unifr.ch/unifr/documents/305278
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