Electron attachment properties of c-C₄F₈O in different environments
- Chachereau, A. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
- Fedor, Juraj J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
- Janečková, Radmila Department of Chemistry, University of Fribourg, Switzerland - Faculty of Safety Engineering, VŠB—Technical University of Ostrava, Czech Republic
- Kočišek, J. J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
- Rabie, M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
- Franck, C. M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
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2016
Published in:
- Journal of Physics D: Applied Physics. - 2016, vol. 49, no. 37, p. 375201
English
The electron attachment properties of octafluorotetrahydrofuran (c-C₄F₈O) are investigated using two complementary experimental setups. The attachment and ionization cross sections of c-C₄F₈O are measured using an electron beam experiment. The effective ionization rate coefficient, electron drift velocity and electron diffusion coefficient in c-C₄F₈O diluted to concentrations lower than 0.6% in the buffer gases N₂, CO₂ and Ar, are measured using a pulsed Townsend experiment. A kinetic model is proposed, which combines the results of the two experiments.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Chimie
- Language
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- English
- Classification
- Chemistry
- License
- License undefined
- Identifiers
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- RERO DOC 278485
- DOI 10.1088/0022-3727/49/37/375201
- Persistent URL
- https://folia.unifr.ch/unifr/documents/305242
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