Electron attachment properties of c-C₄F₈O in different environments

Chachereau, A.; Fedor, Juraj; Janečková, Radmila; Kočišek, J.; Rabie, M.; Franck, C. M.

doi:10.1088/0022-3727/49/37/375201

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Journal article

Electron attachment properties of c-C₄F₈O in different environments

Chachereau, A. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
Fedor, Juraj J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
Janečková, Radmila Department of Chemistry, University of Fribourg, Switzerland - Faculty of Safety Engineering, VŠB—Technical University of Ostrava, Czech Republic
Kočišek, J. J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
Rabie, M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
Franck, C. M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland

2016

Published in:

Journal of Physics D: Applied Physics. - 2016, vol. 49, no. 37, p. 375201

English The electron attachment properties of octafluorotetrahydrofuran (c-C₄F₈O) are investigated using two complementary experimental setups. The attachment and ionization cross sections of c-C₄F₈O are measured using an electron beam experiment. The effective ionization rate coefficient, electron drift velocity and electron diffusion coefficient in c-C₄F₈O diluted to concentrations lower than 0.6% in the buffer gases N₂, CO₂ and Ar, are measured using a pulsed Townsend experiment. A kinetic model is proposed, which combines the results of the two experiments.

Faculty

Faculté des sciences et de médecine

Department

Département de Chimie

Language