Journal article

Electron attachment properties of c-C₄F₈O in different environments

  • Chachereau, A. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
  • Fedor, Juraj J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
  • Janečková, Radmila Department of Chemistry, University of Fribourg, Switzerland - Faculty of Safety Engineering, VŠB—Technical University of Ostrava, Czech Republic
  • Kočišek, J. J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Prague, Czech Republic
  • Rabie, M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
  • Franck, C. M. Power Systems and High Voltage Laboratories, ETH Zurich, Switzerland
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    2016
Published in:
  • Journal of Physics D: Applied Physics. - 2016, vol. 49, no. 37, p. 375201
English The electron attachment properties of octafluorotetrahydrofuran (c-C₄F₈O) are investigated using two complementary experimental setups. The attachment and ionization cross sections of c-C₄F₈O are measured using an electron beam experiment. The effective ionization rate coefficient, electron drift velocity and electron diffusion coefficient in c-C₄F₈O diluted to concentrations lower than 0.6% in the buffer gases N₂, CO₂ and Ar, are measured using a pulsed Townsend experiment. A kinetic model is proposed, which combines the results of the two experiments.
Faculty
Faculté des sciences et de médecine
Department
Département de Chimie
Language
  • English
Classification
Chemistry
License
License undefined
Identifiers
Persistent URL
https://folia.unifr.ch/unifr/documents/305242
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