Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS 2
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Pankratov, V
Research Centre for Molecular Materials, University of Oulu, Finland -
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Hoszowska, Joanna
Department of Physics, University of Fribourg, Switzerland -
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Dousse, Jean-Claude
Department of Physics, University of Fribourg, Switzerland
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Huttula, M
Research Centre for Molecular Materials, University of Oulu, Finland
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Kis, A
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
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Krasnozhon, D
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
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Zhang, M
Department of Physics, East China University of Science and Technology, Shanghai, China
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Cao, Wei
Research Centre for Molecular Materials, University of Oulu, Finland
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Published in:
- Journal of Physics: Condensed Matter. - 2016, vol. 28, no. 1, p. 015301
English
We report on vacuum ultraviolet (VUV) excited photoluminescence (PL) spectra emitted from a chemical vapor deposited MoS₂ few-layered film. The excitation spectrum was recorded by monitoring intensities of PL spectra at ~1.9 eV. A strong wide excitation band peaking at 7 eV was found in the excitation. The PL excitation band is most intensive at liquid helium temperature and completely quenched at 100 K. Through first-principles calculations of photoabsorption in MoS₂, the excitation was explicated and attributed to transitions of electrons from p- and d- type states in the valence band to the d- and p-type states in the conduction band. The obtained photon-in/photon-out results clarify the excitation and emission behavior of the low dimensional MoS₂ when interacting with the VUV light sources.
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Faculty
- Faculté des sciences et de médecine
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Department
- Département de Physique
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Language
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Classification
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Physics
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License
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License undefined
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Identifiers
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Persistent URL
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https://folia.unifr.ch/unifr/documents/304903
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