Dynamics of screening in photodoped Mott insulators
- Golež, Denis Department of Physics, University of Fribourg, Switzerland
- Eckstein, Martin Max Planck Research Department for Structural Dynamics, University of Hamburg, Germany
- Werner, Philipp Department of Physics, University of Fribourg, Switzerland
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12.11.2015
Published in:
- Physical Review B. - 2015, vol. 92, no. 19, p. 195123
English
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 258067
- DOI 10.1103/PhysRevB.92.195123
- Persistent URL
- https://folia.unifr.ch/unifr/documents/304678
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