Muonium avoided level crossing measurement of electron spin relaxation rate in a series of substituted anthradithiophene based molecules
- Han, S. Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China - Queen Mary University of London, UK
- Wang, K. Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China - Queen Mary University of London, UK
- Willis, M. Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China
- Nuccio, Laura Department of Physics and Fribourg Centre for Nanomaterials-Frimat, University of Fribourg, Switzerland
- Pratt, F. L. ISIS Muon Facility, Rutherford Appleton Laboratory, STFC, Chilton, Didcot, UK
- Lord, J. S. ISIS Muon Facility, Rutherford Appleton Laboratory, STFC, Chilton, Didcot, UK
- Thorley, K. J. Department of Chemistry, University of Kentucky, Lexington, Kentucky, USA
- Anthony, J. Department of Chemistry, University of Kentucky, Lexington, Kentucky, USA
- Drew, A. J. Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China - Queen Mary University of London, UK - ISIS Muon Facility, Rutherford Appleton Laboratory, STFC, Chilton, Didcot, UK
- Zhang, S. Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China - Queen Mary University of London, UK
- Schulz, Leander Sichuan University, School of Physical Science and Technology, Chengdu, Sichuan, China
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11.05.2015
Published in:
- Synthetic Metals. - 2015, vol. 208, p. 39–42
English
Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on tert-butyl-ethynyl anthradithiophene, tri-methyl-silyl-ethynyl anthradithiophene and tri-ethygermyl-ethynyl anthradithiophene at different temperatures are presented. This series of molecules have an identical anthradithiophene backbone, but we have performed a targeted substitution on the central atom of the two side groups, of C, Si and Ge. We extracted the electron spin relaxation for the three molecules of this series and discuss them in the context of previously published results.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 258056
- DOI 10.1016/j.synthmet.2015.04.020
- Persistent URL
- https://folia.unifr.ch/unifr/documents/304616
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