Valence band electronic structure characterization of the rutile TiO₂ (110)-(1 × 2) reconstructed surface
Sánchez-Sánchez, C.Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Instituto de Ciencia de Materiales de Sevilla (ICMSE-CSIC), Sevilla, Spain
Garnier, Michael G.Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Aebi, PhilippDépartement de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Blanco-Rey, M.Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
Andres, P. L. deInstituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
Martín-Gago, José ÁngelInstituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Centro de Astrobiologia (CSIC-INTA), Madrid, Spain
López, M. F.Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain
English
The electronic structure of the TiO₂ (110)-(1 × 2) surface has been studied by means of angular resolved ultraviolet photoemission spectroscopy (ARUPS). The valence band dispersion along the high symmetry surface directions, [001] and [1–10], has been recorded. The experimental data show no dispersion of the band-gap Ti 3d states. However, the existence of dispersive bands along the [001] direction located at about 7 eV below the Fermi level is reported. The existence of two different contributions in the emission from the defects-related state located in the gap of the surface is univocally shown for the first time.