Valence band electronic structure characterization of the rutile TiO₂ (110)-(1 × 2) reconstructed surface
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Sánchez-Sánchez, C.
Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Instituto de Ciencia de Materiales de Sevilla (ICMSE-CSIC), Sevilla, Spain
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Garnier, Michael G.
Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
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Aebi, Philipp
Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
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Blanco-Rey, M.
Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
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Andres, P. L. de
Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
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Martín-Gago, José Ángel
Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Centro de Astrobiologia (CSIC-INTA), Madrid, Spain
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López, M. F.
Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain
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Published in:
- Surface Science. - 2013, vol. 608, p. 92-96
English
The electronic structure of the TiO₂ (110)-(1 × 2) surface has been studied by means of angular resolved ultraviolet photoemission spectroscopy (ARUPS). The valence band dispersion along the high symmetry surface directions, [001] and [1–10], has been recorded. The experimental data show no dispersion of the band-gap Ti 3d states. However, the existence of dispersive bands along the [001] direction located at about 7 eV below the Fermi level is reported. The existence of two different contributions in the emission from the defects-related state located in the gap of the surface is univocally shown for the first time.
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Faculty
- Faculté des sciences et de médecine
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Department
- Département de Physique
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Language
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Classification
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Physics
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License
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License undefined
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Identifiers
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Persistent URL
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https://folia.unifr.ch/unifr/documents/302732
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