Journal article

Valence band electronic structure characterization of the rutile TiO₂ (110)-(1 × 2) reconstructed surface

  • Sánchez-Sánchez, C. Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Instituto de Ciencia de Materiales de Sevilla (ICMSE-CSIC), Sevilla, Spain
  • Garnier, Michael G. Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
  • Aebi, Philipp Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
  • Blanco-Rey, M. Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
  • Andres, P. L. de Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Donostia International Physics Center, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, Spain
  • Martín-Gago, José Ángel Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain - Centro de Astrobiologia (CSIC-INTA), Madrid, Spain
  • López, M. F. Instituto Ciencia de Materiales de Madrid (ICMM-CSIC), C/Sor , Madrid, Spain
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    06.10.2012
Published in:
  • Surface Science. - 2012
English The electronic structure of the TiO₂ (110)-(1 × 2) surface has been studied by means of angular resolved ultraviolet photoemission spectroscopy (ARUPS). The valence band dispersion along the high symmetry surface directions, [001] and [1–10], has been recorded. The experimental data show no dispersion of the band-gap Ti 3d states. However, the existence of dispersive bands along the [001] direction located at about 7 eV below the Fermi level is reported. The existence of two different contributions in the emission from the defects-related state located in the gap of the surface is univocally shown for the first time.
Faculty
Faculté des sciences et de médecine
Department
Département de Physique
Language
  • English
Classification
Physics
License
License undefined
Identifiers
Persistent URL
https://folia.unifr.ch/unifr/documents/302732
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