Reversible control of the electronic density of states at the Fermi level of Ca₃Co₄O<sub>9+δ</sub> misfit-layered oxide single crystals through O⁺/H⁺ plasma exposure

Moser, D.; Garnier, Michael G.; Karvonen, L.; Shkabko, A.; Aebi, Philipp; Weidenkaff, A.

doi:10.1007/s10853-012-6880-6

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Reversible control of the electronic density of states at the Fermi level of Ca₃Co₄O_9+δ misfit-layered oxide single crystals through O⁺/H⁺ plasma exposure

Moser, D. Laboratory for Solid State Chemistry and Catalysis, EMPA, Dübendorf, Switzerland
Garnier, Michael G. Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Karvonen, L. Laboratory for Solid State Chemistry and Catalysis, EMPA, Dübendorf, Switzerland
Shkabko, A. Laboratory for Solid State Chemistry and Catalysis, EMPA, Dübendorf, Switzerland
Aebi, Philipp Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Weidenkaff, A. Laboratory for Solid State Chemistry and Catalysis, EMPA, Dübendorf, Switzerland

26.09.2012

Published in:

Journal of Materials Science. - 2013, vol. 48, no. 7, p. 2823-2828

English Misfit-layered Ca₃Co₄O₉ crystals were grown and characterized via XRD, SEM, and photo-emission spectroscopy (PES). The evolution of the intensity at the Fermi level (E _F) with varying oxygen content was studied by PES. Oxygen species were successfully introduced and removed through O⁺ and H⁺ microwave-plasma (2.45 GHz, 2–5 mbar) treatments, respectively. A 5 min O⁺ plasma exposure was observed to result into a drastic enhancement in the E _F intensity, demonstrating the influence of oxygen content to the charge carrier population in layered cobalt-oxide materials.

Faculty

Faculté des sciences et de médecine

Department

Département de Physique

Language