Journal article

Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique

  • Kayser, Yves Department of Physics, University of Fribourg, Fribourg, Switzerland
  • Banaś, D. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Cao, Wei Department of Physics, University of Fribourg, Fribourg, Switzerland
  • Dousse, Jean-Claude Department of Physics, University of Fribourg, Fribourg, Switzerland
  • Hoszowska, Joanna Department of Physics, University of Fribourg, Fribourg, Switzerland
  • Jagodziński, P. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Kavčič, Matjaz J. Stefan Institute, Ljubljana, Slovenia
  • Kubala-Kukuś, A. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Nowak, S. Department of Physics, University of Fribourg, Fribourg, Switzerland
  • Pajek, M. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Szlachetko, Jakub Institute of Physics, Jan Kochanowski University, Kielce, Poland - European Synchrotron Radiation Facility ESRF , Grenoble, France
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    25.01.2012
Published in:
  • X-Ray Spectrometry. - 2012, vol. 41, no. 2, p. 98-104
English We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.
Faculty
Faculté des sciences et de médecine
Department
Département de Physique
Language
  • English
Classification
Physics
License
License undefined
Identifiers
Persistent URL
https://folia.unifr.ch/unifr/documents/302519
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