Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique
- Kayser, Yves Department of Physics, University of Fribourg, Fribourg, Switzerland
- Banaś, D. Institute of Physics, Jan Kochanowski University, Kielce, Poland
- Cao, Wei Department of Physics, University of Fribourg, Fribourg, Switzerland
- Dousse, Jean-Claude Department of Physics, University of Fribourg, Fribourg, Switzerland
- Hoszowska, Joanna Department of Physics, University of Fribourg, Fribourg, Switzerland
- Jagodziński, P. Institute of Physics, Jan Kochanowski University, Kielce, Poland
- Kavčič, Matjaz J. Stefan Institute, Ljubljana, Slovenia
- Kubala-Kukuś, A. Institute of Physics, Jan Kochanowski University, Kielce, Poland
- Nowak, S. Department of Physics, University of Fribourg, Fribourg, Switzerland
- Pajek, M. Institute of Physics, Jan Kochanowski University, Kielce, Poland
- Szlachetko, Jakub Institute of Physics, Jan Kochanowski University, Kielce, Poland - European Synchrotron Radiation Facility ESRF , Grenoble, France
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25.01.2012
Published in:
- X-Ray Spectrometry. - 2012, vol. 41, no. 2, p. 98-104
English
We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 29260
- DOI 10.1002/xrs.2372
- Persistent URL
- https://folia.unifr.ch/unifr/documents/302519
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