Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7 × 7)
Mariotti, NicolasDépartement de physique, Université de Fribourg and Fribourg Center for Nanomaterials, Switzerland
Didiot, ClémentDépartement de physique, Université de Fribourg and Fribourg Center for Nanomaterials, Switzerland
Schwier, Eike FabianDépartement de physique, Université de Fribourg and Fribourg Center for Nanomaterials, Switzerland
Monney, ClaudeSwiss Light Source, Paul Scherrer Institut, Villigen PSI, Switzerland
Perret-Aebi, Laure-EmmanuelleÉcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Neuchâtel, Switzerland
Battaglia, CorsinÉcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Neuchâtel, Switzerland
Garnier, Michael G.Département de physique, Université de Fribourg and Fribourg Center for Nanomaterials, Switzerland
Aebi, PhilippDépartement de physique, Université de Fribourg and Fribourg Center for Nanomaterials, Switzerland
English
Since more than twenty years it is known that deposition of Ag onto Si(111)–(7 × 7) leads under certain conditions to the formation of so-called “ring-like” clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about the electronic properties of clusters which are linked with their atomic structure. Based on a structural model of Au cluster on Si(111)–(7 × 7) and our STM images, we propose an atomic arrangement for the two most stable Ag “ring-like” clusters.