Valence band structure of the Si(331)-(12 × 1) surface reconstruction

Battaglia, Corsin; Schwier, Eike Fabian; Monney, Claude; Didiot, Clément; Mariotti, Nicolas; Gaál-Nagy, Katalin; Onida, Giovanni; Garnier, Michael G.; Aebi, Philipp

doi:10.1088/0953-8984/23/13/135003

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Journal article

Valence band structure of the Si(331)-(12 × 1) surface reconstruction

Battaglia, Corsin Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Neuchâtel, Switzerland
Schwier, Eike Fabian Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Monney, Claude Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland - Paul Scherrer Institut, Research Department Synchrotron Radiation and Nanotechnology, Villigen, Switzerland
Didiot, Clément Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Mariotti, Nicolas Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Gaál-Nagy, Katalin Dipartimento di Fisica and European Theoretical Spectroscopy Facility (ETSF), Università degli Studi di Milano, Italy
Onida, Giovanni Dipartimento di Fisica and European Theoretical Spectroscopy Facility (ETSF), Università degli Studi di Milano, Italy
Garnier, Michael G. Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland
Aebi, Philipp Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Switzerland

14.03.2011

Published in:

Journal of Physics: Condensed Matter. - 2011, vol. 23, no. 13, p. 135003

English Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at − 0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.

Faculty

Faculté des sciences et de médecine

Department

Département de Physique

Language