Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique
- Kayser, Yves Department of Physics, University of Fribourg, Switzerland
- Banaś, D. Institute of Physics, Jan Kochanowski University, Poland
- Cao, Wei Department of Physics, University of Fribourg, Switzerland
- Dousse, Jean-Claude Department of Physics, University of Fribourg, Switzerland
- Hoszowska, Joanna Department of Physics, University of Fribourg, Switzerland
- Jagodziński, P. Institute of Physics, Jan Kochanowski University, Poland
- Kavčič, Matjaz J. Stefan Institute, Ljubljana, Slovenia
- Kubala-Kukuś, A. Institute of Physics, Jan Kochanowski University, Poland
- Nowak, S. Department of Physics, University of Fribourg, Switzerland
- Pajek, M. Institute of Physics, Jan Kochanowski University, Poland
- Szlachetko, Jakub Institute of Physics, Jan Kochanowski University, Poland - European Synchrotron Radiation Facility (ESRF), Grenoble, France
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19.02.2010
Published in:
- Spectrochimica Acta Part B: Atomic Spectroscopy. - 2010, vol. 65, no. 6, p. 445-449
Grazing emission X-ray fluorescence (GEXRF)
Depth profiling
Synchrotron radiation
High-resolution X-ray spectroscopy
Ion implantation
English
The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 17560
- DOI 10.1016/j.sab.2010.02.013
- Persistent URL
- https://folia.unifr.ch/unifr/documents/301724
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