Journal article

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

  • Szlachetko, Jakub Institute of Physics, Jan Kochanowski University, Kielce, Poland - European Synchrotron Radiation Facility (ESRF), Grenoble, France
  • Banaś, D. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Kubala-Kukuś, A. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Pajek, M. Institute of Physics, Jan Kochanowski University, Kielce, Poland
  • Cao, Wei Department of Physics, University of Fribourg, Switzerland
  • Dousse, Jean-Claude Department of Physics, University of Fribourg, Switzerland
  • Hoszowska, Joanna Department of Physics, University of Fribourg, Switzerland
  • Kayser, Yves Department of Physics, University of Fribourg, Switzerland
  • Szlachetko, Monika Department of Physics, University of Fribourg, Switzerland
  • Kavčič, M. J. Stefan Institute, Ljubljana, Slovenia
  • Salome, M. European Synchrotron Radiation Facility (ESRF), Grenoble, France
  • Susini, J. European Synchrotron Radiation Facility (ESRF), Grenoble, France
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    16.04.2009
Published in:
  • Journal of Applied Physics. - 2009, vol. 105, p. 086101
English We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹²  atoms/cm². The latter can be presumably further improved down to 10⁷  atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.
Faculty
Faculté des sciences
Department
Physique
Language
  • English
Classification
Physics
License
License undefined
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Persistent URL
https://folia.unifr.ch/unifr/documents/301202
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