Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology
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Szlachetko, Jakub
Institute of Physics, Jan Kochanowski University, Kielce, Poland - European Synchrotron Radiation Facility (ESRF), Grenoble, France
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Banaś, D.
Institute of Physics, Jan Kochanowski University, Kielce, Poland
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Kubala-Kukuś, A.
Institute of Physics, Jan Kochanowski University, Kielce, Poland
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Pajek, M.
Institute of Physics, Jan Kochanowski University, Kielce, Poland
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Cao, Wei
Department of Physics, University of Fribourg, Switzerland
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Dousse, Jean-Claude
Department of Physics, University of Fribourg, Switzerland
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Hoszowska, Joanna
Department of Physics, University of Fribourg, Switzerland
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Kayser, Yves
Department of Physics, University of Fribourg, Switzerland
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Szlachetko, Monika
Department of Physics, University of Fribourg, Switzerland
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Kavčič, M.
J. Stefan Institute, Ljubljana, Slovenia
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Salome, M.
European Synchrotron Radiation Facility (ESRF), Grenoble, France
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Susini, J.
European Synchrotron Radiation Facility (ESRF), Grenoble, France
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Published in:
- Journal of Applied Physics. - 2009, vol. 105, p. 086101
English
We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.
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Faculty
- Faculté des sciences et de médecine
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Department
- Département de Physique
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Language
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Classification
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Physics
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License
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License undefined
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Identifiers
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Persistent URL
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https://folia.unifr.ch/unifr/documents/301202
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