Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq₃
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Drew, Alan J.
Département de Physique, Université de Fribourg, Switzerland
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Pratt, F. L.
ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, United Kingdom
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Hoppler, Justin
Département de Physique, Université de Fribourg, Switzerland
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Schulz, Leander
Département de Physique, Université de Fribourg, Switzerland
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Malik, Vivek Kumar
Département de Physique, Université de Fribourg, Switzerland
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Morley, N. A.
Dept. of Engineering Materials, University of Sheffield, United Kingdom
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Desai, P.
Dept. of Physics, Queen Mary, University of London, London, United Kingdom
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Shakya, P.
Dept. of Physics, Queen Mary, University of London, London, United Kingdom
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Kreouzis, T.
Dept. of Physics, Queen Mary, University of London, London, United Kingdom
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Gillin, W. P.
Dept. of Physics, Queen Mary, University of London, London, United Kingdom
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Kim, Kyung Wan
Département de Physique, Université de Fribourg, Switzerland
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Dubroka, Adam
Département de Physique, Université de Fribourg, Switzerland
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Scheuermann, R.
Paul Scherrer Institut, PSI-Villigen, Switzerland
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Published in:
- Physical Review Letters. - 2008, vol. 100, p. 116601
English
Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq₃ (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin relaxation corresponds to that expected for highly anisotropic intermolecular electron hopping. Intermolecular mobility in the fast hopping direction has been found to be 0.23±0.03 cm² V⁻¹ s⁻¹ in the... Show more…
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Faculty
- Faculté des sciences
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Department
- Physique
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Language
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Classification
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Physics
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License undefined
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Persistent URL
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https://folia.unifr.ch/unifr/documents/300650