High-resolution study of x-ray resonant Raman scattering at the k edge of silicon
- Szlachetko, Jakub Department of Physics, University of Fribourg, Switzerland - Institute of Physics, Swietokrzyska Academy, Kielce, Poland
- Dousse, Jean-Claude Department of Physics, University of Fribourg, Switzerland
- Hoszowska, Joanna European Synchrotron Radiation Facility (ESRF), Grenoble, France
- Pajek, M. Institute of Physics, Swietokrzyska Academy, Kielce, Poland
- Barrett, R. European Synchrotron Radiation Facility (ESRF), Grenoble, France
- Berset, Michel Department of Physics, University of Fribourg, Switzerland
- Fennane, Karima Department of Physics, University of Fribourg, Switzerland
- Kubala-Kukus, A. Institute of Physics, Swietokrzyska Academy, Kielce, Poland
- Szlachetko, Monika Department of Physics, University of Fribourg, Switzerland
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14.08.2006
Published in:
- Physical Review Letters. - 2006, vol. 97, p. 073001
English
We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.
- Faculty
- Faculté des sciences et de médecine
- Department
- Département de Physique
- Language
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- English
- Classification
- Physics
- License
- License undefined
- Identifiers
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- RERO DOC 6395
- DOI 10.1103/PhysRevLett.97.073001
- Persistent URL
- https://folia.unifr.ch/unifr/documents/300096
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