Journal article

High-resolution study of x-ray resonant Raman scattering at the k edge of silicon

  • Szlachetko, Jakub Department of Physics, University of Fribourg, Switzerland - Institute of Physics, Swietokrzyska Academy, Kielce, Poland
  • Dousse, Jean-Claude Department of Physics, University of Fribourg, Switzerland
  • Hoszowska, Joanna European Synchrotron Radiation Facility (ESRF), Grenoble, France
  • Pajek, M. Institute of Physics, Swietokrzyska Academy, Kielce, Poland
  • Barrett, R. European Synchrotron Radiation Facility (ESRF), Grenoble, France
  • Berset, Michel Department of Physics, University of Fribourg, Switzerland
  • Fennane, Karima Department of Physics, University of Fribourg, Switzerland
  • Kubala-Kukus, A. Institute of Physics, Swietokrzyska Academy, Kielce, Poland
  • Szlachetko, Monika Department of Physics, University of Fribourg, Switzerland
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    14.08.2006
Published in:
  • Physical Review Letters. - 2006, vol. 97, p. 073001
English We report on the first high-resolution measurements of the <i>K</i> x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1<i>s</i> absorption edge and... Show more…
Faculty
Faculté des sciences et de médecine
Department
Département de Physique
Language
  • English
Classification
Physics
License
License undefined
Identifiers
Persistent URL
https://folia.unifr.ch/unifr/documents/300096