Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors.
- El Abbassi M Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Perrin ML Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Barin GB Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Sangtarash S Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom.
- Overbeck J Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Braun O Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Lambert CJ Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom.
- Sun Q Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Prechtl T Max Planck Institute for Polymer Research, 55128 Mainz, Germany.
- Narita A Max Planck Institute for Polymer Research, 55128 Mainz, Germany.
- Müllen K Max Planck Institute for Polymer Research, 55128 Mainz, Germany.
- Ruffieux P Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Sadeghi H Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom.
- Fasel R Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- Calame M Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
- 2020-04-01
Published in:
- ACS nano. - 2020
English
Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs' molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices.
- Language
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- English
- Open access status
- hybrid
- Identifiers
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- DOI 10.1021/acsnano.0c00604
- PMID 32223259
- Persistent URL
- https://folia.unifr.ch/global/documents/90032
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