Journal article
Nernst limit in dual-gated Si-nanowire FET sensors.
- Knopfmacher O Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
- Tarasov A
- Fu W
- Wipf M
- Niesen B
- Calame M
- Schönenberger C
- 2010-05-27
Published in:
- Nano letters. - 2010
English
Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
- Language
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- English
- Open access status
- closed
- Identifiers
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- DOI 10.1021/nl100892y
- PMID 20499926
- Persistent URL
- https://folia.unifr.ch/global/documents/84788
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