Journal article
NaF/RbF-Treated Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: Distinct Surface Modifications Caused by Two Different Types of Rubidium Chemistry.
- Bombsch J Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Avancini E Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland.
- Carron R Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland.
- Handick E Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Garcia-Diez R Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Hartmann C Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Félix R Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Ueda S NIMS Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan.
- Wilks RG Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- Bär M Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.
- 2020-07-08
Published in:
- ACS applied materials & interfaces. - 2020
English
The underlying beneficial mechanism of heavy alkali postdeposition treatment (PDT) of Cu(In,Ga)Se2 thin-film solar cell absorbers that led to new record efficiencies in recent years is studied using photoelectron spectroscopy. Excitation energies between 40.8 eV and 6 keV were used to examine the near-surface region of Cu(In,Ga)Se2 thin-film solar cell absorbers that underwent NaF and combined NaF/RbF PDT. The already Cu-deficient surface region after NaF PDT, which is modeled as a Cu:(In + Ga):Se = 1:5:8 phase, shows further depletion after NaF/RbF PDT and seems to incorporate some Rb. Additionally, we have found strong indications for the NaF/RbF PDT-induced formation of a Rb-In-Se-type compound with a 1:1:2 stoichiometry partially covering the absorber surface. The electronic Cu(In,Ga)Se2 structure is modified due to the RbF treatment, with a pronounced shift in the valence band maximum away from the Fermi level in the immediate vicinity of the surface.
- Language
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- English
- Open access status
- closed
- Identifiers
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- DOI 10.1021/acsami.0c08794
- PMID 32633119
- Persistent URL
- https://folia.unifr.ch/global/documents/280656
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