Journal article

Plasmonic IQ modulators with attojoule per bit electrical energy consumption.

  • Heni W Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland. wheni@ethz.ch.
  • Fedoryshyn Y Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Baeuerle B Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Josten A Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Hoessbacher CB Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Messner A Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Haffner C Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Watanabe T Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Salamin Y Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Koch U Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland.
  • Elder DL Department of Chemistry, University of Washington, Seattle, WA, 98195-1700, USA.
  • Dalton LR Department of Chemistry, University of Washington, Seattle, WA, 98195-1700, USA.
  • Leuthold J Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092, Zurich, Switzerland. leuthold@ethz.ch.
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  • 2019-04-14
Published in:
  • Nature communications. - 2019
English Coherent optical communications provides the largest data transmission capacity with the highest spectral efficiency and therefore has a remarkable potential to satisfy today's ever-growing bandwidth demands. It relies on so-called in-phase/quadrature (IQ) electro-optic modulators that encode information on both the amplitude and the phase of light. Ideally, such IQ modulators should offer energy-efficient operation and a most compact footprint, which would allow high-density integration and high spatial parallelism. Here, we present compact IQ modulators with an active section occupying a footprint of 4 × 25 µm × 3 µm, fabricated on the silicon platform and operated with sub-1-V driving electronics. The devices exhibit low electrical energy consumptions of only 0.07 fJ bit-1 at 50 Gbit s-1, 0.3 fJ bit-1 at 200 Gbit s-1, and 2 fJ bit-1 at 400 Gbit s-1. Such IQ modulators may pave the way for application of IQ modulators in long-haul and short-haul communications alike.
Language
  • English
Open access status
gold
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Persistent URL
https://folia.unifr.ch/global/documents/220773
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