Back
Full-text
Journal article

Record thermopower found in an IrMn-based spintronic stack.

  • Tu S Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Ziman T Institut Laue-Langevin, 38042, Grenoble, France.
  • Yu G Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.
  • Wan C Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.
  • Hu J Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Wu H Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.
  • Wang H Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Liu M Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
  • Liu C Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Guo C Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.
  • Zhang J Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Cabero Z MA Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Zhang Y Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
  • Gao P Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
  • Liu S Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, China.
  • Yu D Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
  • Han X Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.
  • Hallsteinsen I Department of Electronic Systems, Norwegian University of Science and Technology, Trondheim, 7491, Norway.
  • Gilbert DA Material Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA.
  • Matsuo M Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Ohnuma Y Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Wölfle P Institute for Theory of Condensed Matter, Karlsruhe Institute of Technology, 76049, Karlsruhe, Germany.
  • Wang KL Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.
  • Ansermet JP Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
  • Maekawa S Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Yu H Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China. haiming.yu@buaa.edu.cn.
Show more…
  • 2020-04-26
Published in:
  • Nature communications. - 2020
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy
General Chemistry
English The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K-1 at room temperature. Our results demonstrate that IrMn-based magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.
Language
  • English
Open access status
gold
Identifiers
Persistent URL
https://folia.unifr.ch/global/documents/212345
Statistics
Document views: 38 File downloads:
  • Full-text: 0