Journal article
Silicon-based ion-sensitive field-effect transistor shows negligible dependence on salt concentration at constant pH.
- Knopfmacher O Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
- Tarasov A
- Wipf M
- Fu W
- Calame M
- Schönenberger C
- 2012-02-11
Published in:
- Chemphyschem : a European journal of chemical physics and physical chemistry. - 2012
- Language
-
- English
- Open access status
- closed
- Identifiers
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- DOI 10.1002/cphc.201100918
- PMID 22323343
- Persistent URL
- https://folia.unifr.ch/global/documents/205216
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