Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite.
- Seo JY School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. npark@skku.edu.
- Choi J Department of Materials Science and Engineering, Research Center for Advanced Materials, Seoul National University, Seoul 08826, Korea. hwjang@snu.ac.kr.
- Kim HS Laboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland.
- Kim J Department of Chemistry, Ajou University, Suwon 16499, Korea.
- Yang JM School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. npark@skku.edu.
- Cuhadar C School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. npark@skku.edu.
- Han JS Department of Materials Science and Engineering, Research Center for Advanced Materials, Seoul National University, Seoul 08826, Korea. hwjang@snu.ac.kr.
- Kim SJ Department of Chemistry, Ajou University, Suwon 16499, Korea.
- Lee D Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.
- Jang HW Department of Materials Science and Engineering, Research Center for Advanced Materials, Seoul National University, Seoul 08826, Korea. hwjang@snu.ac.kr.
- Park NG School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. npark@skku.edu.
- 2017-10-11
Published in:
- Nanoscale. - 2017
English
Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensional (3D) MAPbI3. However, MAPbI3 often exhibits less reliable switching behavior probably due to the uncontrollable random formation of conducting filaments. Here, we report the resistive switching property of 2-dimensional (2D) OHP and compare switching characteristics depending on structural dimensionality. The dimensionality is controlled by changing the composition of BA2MAn-1PbnI3n+1 (BA = butylammonium, MA = methylammonium), where 2D is formed from n = 1, and 3D is formed from n = ∞. Quasi 2D compositions with n = 2 and 3 are also compared. Transition from a high resistance state (HRS) to a low resistance state (LRS) occurs at 0.25 × 106 V m-1 for 2D BA2PbI4 film, which is lower than those for quasi 2D and 3D. Upon reducing the dimensionality from 3D to 2D, the ON/OFF ratio significantly increases from 102 to 107, which is mainly due to the decreased HRS current. A higher Schottky barrier and thermal activation energy are responsible for the low HRS current. We demonstrate for the first time reliable resistive switching from 4 inch wafer-scale BA2PbI4 thin film working at both room temperature and a high temperature of 87 °C, which strongly suggests that 2D OHP is a promising candidate for resistive switching memory.
- Language
-
- English
- Open access status
- green
- Identifiers
-
- DOI 10.1039/c7nr05582j
- PMID 28994433
- Persistent URL
- https://folia.unifr.ch/global/documents/177282
Statistics
Document views: 40
File downloads:
- Full-text: 0