A multi-state memory device based on the unidirectional spin Hall magnetoresistance
- Avci, Can Onur ORCID Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Mann, Maxwell Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Tan, Aik Jun Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Gambardella, Pietro Department of Materials, ETH Zürich, CH-8093 Zürich, Switzerland
- Beach, Geoffrey S. D. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Published in:
- Applied Physics Letters. - AIP Publishing. - 2017, vol. 110, no. 20, p. 203506
- Language
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- English
- Open access status
- green
- Identifiers
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- DOI 10.1063/1.4983784
- ISSN 0003-6951
- Persistent URL
- https://folia.unifr.ch/global/documents/114069
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