2.1-W picosecond passively mode-locked external-cavity semiconductor laser.
- Aschwanden A Department of Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology (ETH), ETH Zürich Hönggerberg, Wolfgang-Pauli-Strasse 16, 8093 Zürich, Switzerland. aschwanden@phys.ethz.ch
- Lorenser D
- Unold HJ
- Paschotta R
- Gini E
- Keller U
- 2005-03-09
Published in:
- Optics letters. - 2005
English
We demonstrate an optically pumped passively mode-locked external-cavity semiconductor laser generating 4.7-ps pulses at 957 nm with as much as 2.1 W of average output power and a 4-GHz repetition rate. Compared with earlier results, the chirp of the pulses has been greatly reduced by use of an intracavity etalon. Apart from restricting the bandwidth, the etalon also helps optimize wavelength-dependent gain parameters and dispersion.
- Language
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- English
- Open access status
- green
- Identifiers
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- DOI 10.1364/ol.30.000272
- PMID 15751882
- Persistent URL
- https://folia.unifr.ch/global/documents/111688
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