<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Martino, Edoardo</dc:creator>
  <dc:creator>Santos-Cottin, David</dc:creator>
  <dc:creator>Le Mardelé, Florian</dc:creator>
  <dc:creator>Semeniuk, Konstantin</dc:creator>
  <dc:creator>Pizzochero, Michele</dc:creator>
  <dc:creator>Čerņevičs, Kristia̅ns</dc:creator>
  <dc:creator>Baptiste, Benoît</dc:creator>
  <dc:creator>Delbes, Ludovic</dc:creator>
  <dc:creator>Klotz, Stefan</dc:creator>
  <dc:creator>Capitani, Francesco</dc:creator>
  <dc:creator>Berger, Helmuth</dc:creator>
  <dc:creator>Yazyev, Oleg V.</dc:creator>
  <dc:creator>Akrap, Ana</dc:creator>
  <dc:date>2020-09-08</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">Applying elastic deformation can tune a material’s physical properties locally and  reversibly. Spatially modulated lattice deformation can create a bandgap gradient,  favoring photogenerated charge separation and collection in optoelectronic devices.  These advantages are hindered by the maximum elastic strain that a material can  withstand before breaking. Nanomaterials derived by exfoliating transition metal  dichalcogenides (TMDs) are an ideal playground for elastic deformation, as they can  sustain large elastic strains, up to a few percent. However, exfoliable TMDs with highly  strain-tunable properties have proven challenging for researchers to identify. We  investigated 1T-ZrS2 and 1T-ZrSe2, exfoliable semiconductors with large bandgaps.  Under compressive deformation, both TMDs dramatically change their physical  properties. 1T-ZrSe2 undergoes a reversible transformation into an exotic three- dimensional lattice, with a semiconductor-to-metal transition. In ZrS2, the irreversible  transformation between two different layered structures is accompanied by a sudden  14% bandgap reduction. These results establish that Zr-based TMDs are an optimal  strain-tunable platform for spatially textured bandgaps, with a strong potential for  novel optoelectronic devices and light harvesting.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://folia.unifr.ch/global/documents/309107</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/309107/files/akr_spt.pdf</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/309107/files/akr_spt_sm.pdf</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1021/acsmaterialslett.0c00252</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>License undefined</dc:rights>
  <dc:source>ACS Materials Letters. - 2020, vol. 2, no. 9, p. 1115–1120</dc:source>
  <dc:subject>info:eu-repo/classification/udc/53</dc:subject>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Structural phase transition and bandgap control through mechanical deformation in layered semiconductors 1T–ZrX2 (X = S, Se)</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>
