<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Dolabella, Simone</dc:creator>
  <dc:creator>Frison, Ruggero</dc:creator>
  <dc:creator>Chahine, Gilbert A.</dc:creator>
  <dc:creator>Richter, Carsten</dc:creator>
  <dc:creator>Schulli, Tobias U.</dc:creator>
  <dc:creator>Tasdemir, Zuhal</dc:creator>
  <dc:creator>Alaca, B. Erdem</dc:creator>
  <dc:creator>Leblebic, Yusuf</dc:creator>
  <dc:creator>Dommann, Alex</dc:creator>
  <dc:creator>Neels, Antonia</dc:creator>
  <dc:date>2020-02-01</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">Silicon nanowire-based sensors find many applications in micro- and nano- electromechanical systems, thanks to their unique characteristics of flexibility and  strength that emerge at the nanoscale. This work is the first study of this class of  micro- and nano-fabricated silicon-based structures adopting the scanning X-ray  diffraction microscopy technique for mapping the in-plane crystalline strain  ([epsilon]044) and tilt of a device which includes pillars with suspended nanowires on  a substrate. It is shown how the micro- and nanostructures of this new type of  nanowire system are influenced by critical steps of the fabrication process, such as  electron-beam lithography and deep reactive ion etching. X-ray analysis performed on  the 044 reflection shows a very low level of lattice strain (&lt; 0.00025 Δd/d) but a  significant degree of lattice tilt (up to 0.214°). This work imparts new insights into the  crystal structure of micro- and nanomaterial-based sensors, and their relationship with  critical steps of the fabrication process.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://folia.unifr.ch/global/documents/308616</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/308616/files/nee_rqt.pdf</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/308616/files/nee_rqt_sm.pdf</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1107/S1600576719015504</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>License undefined</dc:rights>
  <dc:source>Journal of Applied Crystallography. - 2020, vol. 53, no. 1, p. 58–68</dc:source>
  <dc:subject>info:eu-repo/classification/udc/54</dc:subject>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (∊044) and tilt of suspended monolithic silicon nanowire structures</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>
