<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Nicholson, Christopher W.</dc:creator>
  <dc:creator>Puppin, M.</dc:creator>
  <dc:creator>Lücke, A.</dc:creator>
  <dc:creator>Gerstmann, U.</dc:creator>
  <dc:creator>Krenz, M.</dc:creator>
  <dc:creator>Schmidt, W. G.</dc:creator>
  <dc:creator>Rettig, L.</dc:creator>
  <dc:creator>Ernstorfer, R.</dc:creator>
  <dc:creator>Wolf, M.</dc:creator>
  <dc:date>2019-04-03</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">We investigate the excited state electronic structure of the model phase transition  system In/Si(111) using femtosecond time- and angle-resolved photoemission  spectroscopy (trARPES). An extreme ultraviolet 500 kHz laser source at 21.7 eV is  utilized both to map the energy of excited states above the Fermi level and follow the  momentum-resolved population dynamics on a femtosecond timescale. Excited-state  band mapping is used to characterize the normally unoccupied electronic structure  above the Fermi level in both structural phases of In/Si(111): the metallic (4 x 1) and  the gapped (8 x 2) phases. The extracted band positions are compared withband- structure calculations utilizing density functional theory within both the local density  approximation and GW approximations (single-particle Green's function (G) +  screened Coulomb interaction (W)). While good overall agreement is found between  the GW-calculated band structure and experiment, deviations in specific momentum  regions may indicate the importance of excitonic effects not accounted for at this level  of approximation. To probe the dynamics of these excited states, their momentum- resolved transient population dynamics are extracted with trARPES. The transient  intensities are compared to a simulated spectral function modeled by a state  population employing a transient elevated electronic temperature as determined  experimentally. This allows the momentum-resolved population dynamics to be  quantitatively reproduced, revealing important insights into the transfer of energy from  the electronic system to the lattice. In particular, a comparison between the magnitude  and relaxation time of the transient electronic temperature observed by trARPES with  those of the lattice as probed in previous ultrafast electron diffraction studies implies a  highly nonthermal phonon distribution at the surface following photo-excitation. This  suggests that the energy from the initially excited electronic system is initially  transferred to high-energy optical phonon modes followed by cooling and  thermalization of the photo-excited system by much slower phonon-phonon coupling.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://folia.unifr.ch/global/documents/307827</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/307827/files/nic_esb.pdf</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.99.155107</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>License undefined</dc:rights>
  <dc:source>Physical Review B. - 2019, vol. 99, no. 15, p. 155107</dc:source>
  <dc:subject>info:eu-repo/classification/udc/53</dc:subject>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Excited-state band mapping and momentum-resolved ultrafast population dynamics in In/Si(111) nanowires investigated with XUV-based time- and angle-resolved photoemission spectroscopy</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>
