<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Yu, Xiaoyun</dc:creator>
  <dc:creator>Rahmanudin, Aiman</dc:creator>
  <dc:creator>Jeanbourquin, Xavier A.</dc:creator>
  <dc:creator>Tsokkou, Demetra</dc:creator>
  <dc:creator>Guijarro, Néstor</dc:creator>
  <dc:creator>Banerji, Natalie</dc:creator>
  <dc:creator>Sivula, Kevin</dc:creator>
  <dc:date>2017-02-10</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">Exfoliated transition metal dichalcogenides (2D-TMDs) are attractive light-harvesting  materials for large-area and inexpensive solar energy conversion given their ability to  form highly tolerant heterojunctions. However, the preparation of large-area  heterojunctions with these materials remains a challenge toward practical devices, and  the details of photogenerated charge carrier harvesting are not well established. In this  work, we use all solution-based methods to prepare large-area hybrid heterojunction  films consisting of exfoliated semiconducting 2H-MoS2 flakes and a perylene-diimide  (PDI) derivative. Hybrid photoelectrodes exhibited a 6-fold improvement in  photocurrent compared to that of bare MoS2 or PDI films. Kelvin probe force  microscopy, X-ray photoelectron spectroscopy, and transient absorption  measurements of the hybrid films indicate the formation of an interfacial dipole at the  MoS2/organic interface and suggest that the photogenerated holes transfer from MoS2  to the PDI. Moreover, performing the same analysis on MoSe2-based hybrid devices  confirms the importance of proper valence band alignment for efficient charge transfer  and photogenerated carrier collection in TMD/organic semiconductor hybrid  heterojunctions.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://folia.unifr.ch/global/documents/305448</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/305448/files/ban_hhs.pdf</dc:identifier>
  <dc:identifier>https://folia.unifr.ch/documents/305448/files/ban_hhs_sm.pdf</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1021/acsenergylett.6b00707</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>License undefined</dc:rights>
  <dc:source>ACS Energy Letters. - 2017, vol. 2, no. 2, p. 524–531</dc:source>
  <dc:subject>info:eu-repo/classification/udc/54</dc:subject>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Hybrid heterojunctions of solution-processed semiconducting 2d transition metal dichalcogenides</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>
