Nuccio, Laura Willis, M. Schulz, Leander Fratini, S. Messina, F. D’Amico, M. Pratt, F. L. Lord, J. S. McKenzie, I. Loth, M. Purushothaman, B. Anthony, J. Heeney, M. Wilson, R. M. Hernández, I. Cannas, M. Sedlak, K. Kreouzis, T. Gillin, W. P. Bernhard, Christian Drew, Alan J. 2013-05-23 Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials. application/pdf https://folia.unifr.ch/global/documents/302970 https://folia.unifr.ch/documents/302970/files/ber_iso.pdf https://folia.unifr.ch/documents/302970/files/ber_iso_sm1.pdf eng info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.110.216602 info:eu-repo/semantics/openAccess License undefined Physical Review Letters. - 2013, vol. 110, no. 21, p. 216602 info:eu-repo/classification/udc/53 Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors http://purl.org/coar/resource_type/c_6501