Kayser, Yves Banaś, D. Cao, Wei Dousse, Jean-Claude Hoszowska, Joanna Jagodziński, P. Kavčič, Matjaz Kubala-Kukuś, A. Nowak, S. Pajek, M. Szlachetko, Jakub 2012-01-25 We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions. application/pdf https://folia.unifr.ch/global/documents/302519 https://folia.unifr.ch/documents/302519/files/dou_dpd.pdf eng info:eu-repo/semantics/altIdentifier/doi/10.1002/xrs.2372 info:eu-repo/semantics/openAccess License undefined X-Ray Spectrometry. - 2012, vol. 41, no. 2, p. 98-104 info:eu-repo/classification/udc/53 Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique http://purl.org/coar/resource_type/c_6501