Szlachetko, Jakub Banaś, D. Kubala-Kukuś, A. Pajek, M. Cao, Wei Dousse, Jean-Claude Hoszowska, Joanna Kayser, Yves Szlachetko, Monika Kavčič, M. Salome, M. Susini, J. 2009-04-16 We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹²  atoms/cm². The latter can be presumably further improved down to 10⁷  atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed. application/pdf https://folia.unifr.ch/global/documents/301202 https://folia.unifr.ch/documents/301202/files/dousse_ahr.pdf eng info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3086658 info:eu-repo/semantics/openAccess License undefined Journal of Applied Physics. - 2009, vol. 105, p. 086101 decomposition elemental semiconductors impurity states silicon X-ray fluorescence analysis info:eu-repo/classification/udc/53 Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology http://purl.org/coar/resource_type/c_6501