Szlachetko, Jakub Dousse, Jean-Claude Berset, Michel Fennane, Karima Szlachetko, Monika Hoszowska, Joanna Barrett, R. Pajek, M. Kubala-Kukus, A. 2007-02-22 X-ray resonant Raman scattering (RRS) spectra of Al, Al₂O₃, Si, and SiO₂ were measured at the European Synchrotron Radiation Facility, using a high-resolution Bragg-type curved crystal spectrometer. The x-ray RRS spectra were collected at several beam energies tuned below the 1<i>s</i> absorption thresholds of Al and Si. Differences in the spectral features between the elemental samples and the oxide ones were clearly observed. The data were interpreted using the second-order perturbation theory within the Kramers-Heisenberg (KH) approach. It is shown that, using the KH formalism, oscillator strengths that are similar to the ones deduced from x-ray absorption measurements can be extracted from emission x-ray RRS spectra. The total cross sections for the x-ray RRS process were derived for the different photon beam energies and compared with theoretical predictions. For elemental silicon, the weak 1<i>s</i>-3<i>p</i> excitation was observed and found to be consistent with results of density of states calculations. application/pdf https://folia.unifr.ch/global/documents/300154 https://folia.unifr.ch/documents/300154/files/dousse_hrs.pdf eng info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevA.75.022512 info:eu-repo/semantics/openAccess License undefined Physical Review A. - 2007, vol. 75, no. 2, p. 022512 info:eu-repo/classification/udc/53 High-resolution study of the x-ray resonant Raman scattering process around the 1s absorption edge for aluminium, silicon, and their oxides http://purl.org/coar/resource_type/c_6501