Szlachetko, Jakub Dousse, Jean-Claude Hoszowska, Joanna Pajek, M. Barrett, R. Berset, Michel Fennane, Karima Kubala-Kukus, A. Szlachetko, Monika 2006-08-14 We report on the first high-resolution measurements of the <i>K</i> x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1<i>s</i> absorption edge and the 1<i>s</i>-3<i>p</i> excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique. application/pdf https://folia.unifr.ch/global/documents/300096 https://folia.unifr.ch/documents/300096/files/dousse_hrs.pdf eng info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.97.073001 info:eu-repo/semantics/openAccess License undefined Physical Review Letters. - 2006, vol. 97, p. 073001 info:eu-repo/classification/udc/53 High-resolution study of x-ray resonant Raman scattering at the k edge of silicon http://purl.org/coar/resource_type/c_6501